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PD - 9.1356D
IRF7416
HEXFET(R) Power MOSFET
Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S S S G
1 8 7
A D D D D
2
VDSS = -30V
3
6
4
5
RDS(on) = 0.02
T op V ie w
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS EAS dv/dt TJ,TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ - 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-10 -7.1 -45 2.5 0.02 20 370 -5.0 -55 to + 150
Units
A
W
mW/C
V mJ V/ns C
Thermal Resistance Ratings
Parameter
RJA Maximum Junction-to-Ambient
Typ.
---
Max.
50
Units
C/W 8/25/97
IRF7416
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -30 --- --- --- -1.0 5.6 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.024 --- V/C Reference to 25C, ID = -1mA --- 0.020 VGS = -10V, ID = -5.6A --- 0.035 VGS = -4.5V, ID = -2.8A --- --- V VDS = VGS , ID = -250A --- --- S VDS = -10V, ID = -2.8A --- -1.0 VDS = -24V, VGS = 0V A --- -25 VDS = -24V, VGS = 0V, TJ = 125C --- -100 VGS = -20V nA --- 100 VGS = 20V 61 92 ID = -5.6A 8.0 12 nC VDS = -24V 22 32 VGS = -10V, See Fig. 6 and 9 18 --- VDD = -15V 49 --- ID = -5.6A ns 59 --- RG = 6.2 60 --- RD = 2.7, See Fig. 10 1700 --- VGS = 0V 890 --- pF VDS = -25V 410 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 56 99 -3.1 A -45 -1.0 85 150 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = -5.6A, VGS = 0V TJ = 25C, IF = -5.6A di/dt = 100A/s
D
G S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD -5.6A, di/dt 100A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 25mH
RG = 25, IAS = -5.6A. (See Figure 12)
Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec.
IRF7416
100
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP
100
-I D , D ra in -to -S o u rc e C u rre n t (A )
-I D , D ra in -to -S o u rc e C u rre n t (A )
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP
10
10
-3 .0V
-3.0V 20 s P U LSE W IDTH TJ = 25 C A
0.1 1 10
1
1 0.1 1
20 s P U LSE W IDTH TJ = 15 0C A
10
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 2 5 C TJ = 1 5 0 C
10
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = -5.6A
-I D , D rain -to- S our ce C urr ent ( A )
1.5
1.0
0.5
1 3.0 3.5 4.0
V DS = -1 0 V 2 0 s P U L S E W ID T H
4.5 5.0 5.5
A
0.0 -60 -40 -20 0 20 40 60 80
VG S = -10 V
100 120 140 160
A
-VG S , Ga te-to-S o urce V oltage (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRF7416
4000
-V G S , G a te -to -S o u rce V o lta g e (V )
V GS C is s C rss C oss
= 0 V, f = 1M H z = C gs + C gd , Cds SH OR TE D = C gd = C d s + C gd
20
I D = -5.6 A V DS = -24 V V DS = -15 V
16
C , C a p a c ita n c e (p F )
3000
C i ss
2000
12
C os s
8
1000
C rss
4
0 1 10 100
A
0 0 20 40
FO R TEST C IR C U IT SEE F IGU R E 9
60 80
A
100
V D S , D rain-to-S ource Voltage (V )
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-I S D , R e ve rse D ra in C u rre n t (A )
OPERATION IN THIS AREA LIMITED BY RDS(on) -I D , Drain Current (A) I
100us
TJ = 1 50C
10
10 1ms
TJ = 25 C
1 0.4 0.6 0.8 1.0
VG S = 0 V
A
1.2
1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
-V S D , S ource-to-Drain V oltage (V )
-V DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF7416
VDS
QG
RD
VGS RG
-10V
VG
D.U.T.
+
-10V
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
50K 12V .2F .3F
td(on)
tr
t d(off)
tf
VGS 10%
+ D.U.T. VDS
VGS
90%
-3mA
VDS
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
100
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x Z thJA + TA J 0.1 1 10 100
10
0.1 0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
QGS
QGD
VDD
IRF7416
1000
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
RG
D .U .T IA S D R IV E R
0 .0 1
800
VD D A
ID -2.5A -4.5A BOTTOM -5.6A TOP
- 20V tp
600
400
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
200
0 25 50 75 100 125 150
o Starting T J, Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
IRF7416
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS*
**
* dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -
* VDD
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[ VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS
IRF7416
Package Outline
SO8 Outline
INCHES
D -B-
MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
DIM
5
MIN .0532 .0040 .014 .0075 .189 .150
MAX .0688 .0098 .018 .0098 .196 .157
A
6 5 H 0.25 (.010) M AM
5
8 E -A-
7
A1 B C D E
1
2
3
4
e 6X
K x 45 e1 A
e e1 H K L
.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8
0.10 (.004)
-CB 8X 0.25 (.010) A1 M CASBS
L 8X
6
C 8X
RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6.46 ( .255 )
1.78 (.070) 8X
1.27 ( .050 ) 3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S )
3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101
T OP
PART NUMBER
B O T TO M
IRF7416
Tape & Reel Information
SO8 Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 ) 11 .7 ( .46 1 )
8 .1 ( .3 18 ) 7 .9 ( .3 12 )
F E ED D IR E C T IO N
N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .
33 0. 00 (12 .99 2) M A X.
1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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